Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-Tc superconductors

SUPERCONDUCTOR SCIENCE AND TECHNOLOGY (2006) 19-9:907 -911. Universal optimal hole-doping concentration in single-layer high- temperature cuprate superconductors

We argue that in cuprate physics there are two types, hole content per CuO2 plane (Ppl) and the corresponding hole content per unit volume (P3D), of holedoping concentrations for addressing physical properties that are two-dimensional (2D) and three-dimensional (3D) in nature, respectively. We find that superconducting transition temperature (Tc) varies systematically with P3D as a superconduct...

Atomic hole doping of graphene.

The application of graphene in nanoscale electronic devices requires the deliberate control of the density and character of its charge carriers. We show by angle-resolved photoemission spectroscopy that substantial hole doping in the conical band structure of epitaxial graphene monolayers can be achieved by the adsorption of bismuth, antimony, or gold. In the case of gold doping the Dirac point...

Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping

Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing...

Magic doping fractions for high-temperature superconductors.

We report hole-doping dependence of the in-plane resistivity rho(ab) in a cuprate superconductor La(2-x)Sr(x)CuO4, carefully examined using a series of high-quality single crystals. Our detailed measurements find a tendency towards charge ordering at particular rational hole-doping fractions of 1/16, 3/32, 1/8, and 3/16. This observation appears to suggest a specific form of charge order and is...

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas